Heuristic Rules for Group IV Dopant Site Selection in III–V Compounds
Document Type
Article
Publication Date
1997
Publication Title
Journal of Crystal Growth
Volume
175-176
Issue
1
First page number:
224
Last page number:
228
Abstract
The use of column IV dopants in III–V compounds is of great interest because they are easy to handle and in the case of Si, readily available in most molecular beam epitaxy (MBE) chambers. A column IV dopant can act as a donor or an acceptor or both depending on its size relative to the cation and anion sites, the substrate orientation and the growth conditions. In this article, we present heuristic rules for predicting group IV dopant site selection in III–V compounds based on the relative covalent radii of the dopant to the host lattice sites, types and relative numbers of surface dangling bonds and the growth conditions. Preliminary predictions show excellent agreement with available experimental data.
Keywords
Crystal growth; Molecular beam epitaxy; Silicon
Permissions
Use Find in Your Library, contact the author, or use interlibrary loan to garner a copy of the article. Publisher copyright policy allows author to archive post-print (author’s final manuscript). When post-print is available or publisher policy changes, the article will be deposited
Repository Citation
Venkat, R.,
Dorsey, D. L.,
Mahalingam, K.
(1997).
Heuristic Rules for Group IV Dopant Site Selection in III–V Compounds.
Journal of Crystal Growth, 175-176(1),
224-228.
https://digitalscholarship.unlv.edu/ece_fac_articles/20