A Stochastic Model for Crystal-amorphous Transition in Molecular Beam Epistaxial Si (111)

Document Type

Article

Publication Date

1996

Publication Title

Journal of Applied Physics

Volume

80

Issue

11

First page number:

6919

Last page number:

6922

Abstract

Molecular beam epitaxial Si (111) grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal‐amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures in the range of 500–900 K and growth rate in the range of 0.1–3.0 Å/s. The agreement between our results and experimental observations is excellent.

Keywords

Amorphous state; Amorphous substances; Crystal growth; Crystallization; Epitaxy; Molecular beam epitaxy; Phase transformations (Statistical physics); Silicon; Stacking faults; Stochastic Processes; Temperature dependence; Transition temperature

Permissions

Use Find in Your Library, contact the author, or use interlibrary loan to garner a copy of the article. Publisher copyright policy allows author to archive post-print (author’s final manuscript). When post-print is available or publisher policy changes, the article will be deposited


Search your library

Share

COinS