MBE Doping Kinetics - a Rate Equation Study

Document Type

Article

Publication Date

1993

Publication Title

MRS Proceedings

Volume

317

First page number:

387

Last page number:

392

Abstract

A rate equation model based on the master equation is developed for the study of MBE doping kinetics. The Model includes elementary surface processes such as adsorption, evaporation and migration of atoms. The Model is applied to the study of the surface segregation phenomenon during the In doping of Si. The doping studies were performed for the following growth conditions: T in the range 500 — 750°C; a growth rate of 1 μm/hr.; and a flux ratio, JIn/JSi equal to 2.0 × 10-4. The predicted sticking coefficient of In versus obtained shows excellent agreement with experiments. The sticking coefficient decreases with T due to surface segregation aided evaporation of In at higher temperature. The results of dopant depth profile also show excellent qualitative agreement with experiments. The surface segregation of In occurs due to a strong repulsive interaction between In and the host lattice. The results of this study show that there is a dopant depleted zone (DDZ) where the In concentration is lower than both the bulk and the top surface layer. The observed DDZ matches with that observed in experiments.

Keywords

Adsorption; Chemical kinetics--Mathematical models; Doped semiconductors; Molecular beam epitaxy

Disciplines

Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials

Language

English

Permissions

Use Find in Your Library, contact the author, or interlibrary loan to garner a copy of the item. Publisher policy does not allow archiving the final published version. If a post-print (author's peer-reviewed manuscript) is allowed and available, or publisher policy changes, the item will be deposited.

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