Title

Observation of capacitance-voltage oscillations in porous silicon

Document Type

Article

Abstract

This paper presents the experimental observation of room temperature capacitance–voltage oscillations in porous silicon (PS). Analysis of the experimental data suggests density-of-states discontinuities in the PS nanostructures to be the likely origins of the oscillations. From the experimental data, a sub-band energy separation ofis estimated for the dominant silicon nanostructures. This corresponds to a nanostructure dimension of approximately, which agrees well with the value expected for the PS fabrication conditions.

Disciplines

Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials

Permissions

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