Novel quantum wire infrared photodetectors
This paper describes novel semiconductor quantum wire infrared photodetectors in the long- and very long-wavelength regions. The infrared photodetectors are based on intersubband transitions in semiconductor quantum wires and have the potential for higher operational temperature, increased signal-to-noise ratio, reduced dark current, wider spectral range and sensitivity to normal incident radiation. The quantum wire IR detectors are implemented using a nonlithographic nanostructure fabrication technique that is capable of producing large arrays of semiconductor quantum wires of a variety of materials and on different substrates. This paper describes the operational principles, the design procedure as well as the implementation of the quantum wire photodetectors.
Electrical and Computer Engineering | Electromagnetics and Photonics | Electronic Devices and Semiconductor Manufacturing | Engineering
Use Find in Your Library, contact the author, or interlibrary loan to garner a copy of the item. Publisher policy does not allow archiving the final published version. If a post-print (author's peer-reviewed manuscript) is allowed and available, or publisher policy changes, the item will be deposited.
Novel quantum wire infrared photodetectors.
Infrared Physics & Technology, 46