Computer Simulation of Quantum Transport in High Electron Mobility Transistor, Part 1: The Boltzmann-Poisson-Schrödinger Solver
Document Type
Article
Publication Date
3-1995
Publication Title
SIMULATION: Transactions of The Society for Modeling and Simulation International
Volume
12
First page number:
49
Last page number:
65
Keywords
Electrons—Scattering; Modulation-doped field-effect transistors; Semiconductors--Simulation methods; Transport theory
Disciplines
Computer Engineering | Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Engineering | Signal Processing | Systems and Communications
Language
English
Permissions
Use Find in Your Library, contact the author, or interlibrary loan to garner a copy of the item. Publisher policy does not allow archiving the final published version. If a post-print (author's peer-reviewed manuscript) is allowed and available, or publisher policy changes, the item will be deposited.
Repository Citation
Khoie, R.
(1995).
Computer Simulation of Quantum Transport in High Electron Mobility Transistor, Part 1: The Boltzmann-Poisson-Schrödinger Solver.
SIMULATION: Transactions of The Society for Modeling and Simulation International, 12
49-65.