Theoretical study of gate current dependence on gate voltage in HIGFET
The gate current I(g) dependence on gate voltage V(g) is studied, with tunneling through a hetero-barrier theoretically assumed as the dominant mechanism in a Ga(0.47)In(0.53)As / Al(0.47) In(0.53)As / WSi heterostructure insulated gate field effect transistor (HIGFET). Two components of tunneling currents, one from the decay of the quasi-bound resonant states in the accumulation well and the other from the tunneling electrons with kinetic energy above the bulk energy level, were considered. Moreover, the possibility of the electrons being hot is addressed. The tunneling current is obtained as a function of V(g) for two device structures, and are compared with the experimental results. The calculated currents are within a factor of 2 of the experimental results for most voltage range of study with electron temperature is equal to 450 degrees K. The reason for the larger discrepancies between the experimental values and the theoretical values reported in earlier literatures is attributed mainly the exclusion of the hot electron mechanism and neglecting of the contribution to current from the decay of the resonant states in the accumulation well.
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Maheshwarla, S. V.,
Theoretical study of gate current dependence on gate voltage in HIGFET.
Quantum Confinement III: Quantum Wires and Dots, 95(17),
The Electrochemical Society.