Title

An XANES and XES investigation of the electronic structure of indium rich InxGa1-xN films

Document Type

Article

Publication Date

9-2011

Publication Title

Journal of Alloys and Compounds

Volume

509

Issue

39

First page number:

9528

Last page number:

9535

Abstract

The electronic structure of InGaN epitaxial layers grown on sapphire substrates was studied using X-ray absorption at the In L3 and N K edges, as well as N Kα X-ray emission. Knowing that the InGaN crystallizes in an anisotropic wurtzite structure, the linear polarization of synchrotron radiation was exploited to estimate the influence of the crystal structure anisotropy on the distribution of the local density of states at the site of In and N. The calculated partial density of states describes the observed anisotropy in the measured spectra. Influence of the core–hole effect on the analyzed absorption spectra was verified and reveal that a core hole potential is effectively screened by the surface mobile electrons for the sample with maximum indium content. The bandgap values were provided for the investigated InGaN alloys and were found to vary preudo-lineary with indium content.

Keywords

Crystal growth; Crystallography; Free Energy Force Field (FEFF); Gallium alloys; Indium alloys; X-ray Absorption Near Edge Structure; X-ray spectroscopy; XANES; XES

Disciplines

Analytical Chemistry | Atomic, Molecular and Optical Physics | Biological and Chemical Physics | Inorganic Chemistry | Physical Chemistry

Language

English

Comments

DOI: http://dx.doi.org/10.1016/j.jallcom.2011.07.059

Permissions

Use Find in Your Library, contact the author, or use interlibrary loan to garner a copy of the article. Publisher copyright policy allows author to archive post-print (author’s final manuscript). When post-print is available or publisher policy changes, the article will be deposited

Identifier

DOI: http://dx.doi.org/10.1016/j.jallcom.2011.07.059

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