Title

Annealing-induced Effects on the Chemical Structure of the In2S3/CuIn(S,Se)2 thin-film Solar Cell Interface

Document Type

Article

Publication Date

5-14-2015

Publication Title

The Journal of Physical Chemistry C

Volume

119

Issue

19

First page number:

10412

Last page number:

10416

Abstract

We have investigated the impact of heat treatments on the chemical structure of the In2S3/CuIn(S,Se)2 thin-film solar cell interface using X-ray photoelectron and soft X-ray emission spectroscopy. As-grown, we find the formation of a sulfur-poor (indium-rich) In2S3 surface, an abrupt interface, and sulfur atoms in both In2S3 and CuIn(S,Se)2 chemical environments (as expected for an abrupt interface and a thin overlayer). After a heat treatment at 200 °C to simulate subsequent process steps, a strong copper and sodium diffusion into the In2S3 layer is observed. This diffusion extends throughout the layer, indicating the formation of a copper–indium–sulfide phase.

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