Zn-Se-Cd-S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface
ACS Energy Letters
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The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a "redistribution" of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Zn-terminated CZTSe absorber and Cd and S from the buffer layer form a Zn-Se-Cd-S interlayer. We find direct indications for the presence of Cd-S, Cd-Se, and Cd-Se-Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)-(Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath. © 2017 American Chemical Society.
Alsmeier, J. H.,
Wilks, R. G.,
Zn-Se-Cd-S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface.
ACS Energy Letters, 2(7),