Efficient Passivation of N-Type and P-Type Silicon Surface Defects by Hydrogen Sulfide Gas Reaction
Journal of Physics Condensed Matter
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An efficient surface defect passivation is observed by reacting clean Si in a dilute hydrogen sulfide-argon gas mixture ( < 5% H2S in Ar) for both n-type and p-type Si wafers with planar and textured surfaces. Surface recombination velocities of 1.5 and 8 cm s-1 are achieved on n-type and p-type Si wafers, respectively, at an optimum reaction temperature of 550 C that are comparable to the best surface passivation quality used in high efficiency Si solar cells. Surface chemical analysis using x-ray photoelectron spectroscopy shows that sulfur is primarily bonded in a sulfide environment, and synchrotron-based soft x-ray emission spectroscopy of the adsorbed sulfur atoms suggests the formation of S-Si bonds. The sulfur surface passivation layer is unstable in air, attributed to surface oxide formation and a simultaneous decrease of sulfide bonds. However, the passivation can be stabilized by a low-temperature (300 °C) deposited amorphous silicon nitride (a-Si:N X :H) capping layer.
Hydrogen sulfide reaction; Silicon; Surface passivation; X-ray emission spectroscopy; X-ray photoelectron spectroscopy
Electromagnetics and Photonics
Das, U. K.,
Mouri, T. K.,
Efficient Passivation of N-Type and P-Type Silicon Surface Defects by Hydrogen Sulfide Gas Reaction.
Journal of Physics Condensed Matter, 33