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The quantum anomalous hall effect (QAHE) is a phase of matter in which a dissipationless current is made to flow around the edge of a two dimensional (2D) material. Making use of this effect for next generation electronics could lead to faster processors and low power devices. There are very few materials that exist in nature that intrinsically possess the QAHE, however by sandwiching target 2D materials together we can establish this highly sought after phase. By using three 2D materials: graphene, molybdenum disulfide (MoS2) and chromium tri-iodide (CrI3) forming a van der Waals heterostructure we can create a proximity induced magnetism effect. Here, we took highly sensitive capacitance measurements of graphene on MoS2 devices at low temperatures and high magnetic fields. By taking measurements of the penetration field capacitance vs charge density and polarization of a graphene and MoS2 device at 2 Kelvin and zero external magnetic field, we are able to see the charge neutrality point in graphene and the conduction band of MoS2. Using this method of capacitance measurements we plan to integrate thin CrI3 flakes into our graphene and MoS2 devices to develop a full device to study the proximity induced QAHE.

Publication Date

Fall 11-15-2021




Uantum anomalous Hall (QAH) effect; van der Waals heterostructure; Spin orbit coupling; Capacitance; Low temperature

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Faculty Mentor: Joshua Island, Ph.D.


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Van Der Waals Heterostructure Engineered Quantum Anomalous Hall Effect