Segmented Digital SiPM
Document Type
Conference Proceeding
Publication Date
8-4-2019
Publication Title
2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS)
Publisher
Institute of Electrical and Electronics Engineers
Publisher Location
Dallas, TX
Volume
2019
First page number:
1118
Last page number:
1121
Abstract
A digital silicon photomultiplier (SiPM) using segmentation technique is designed, simulated and fabricated in the AMS 0.35 µm SiGe BiCMOS process. The digital SiPM is intended for photon counting applications. The digital SiPM consists of 16 avalanche photodiodes (APD) each with active area of 24 µm x 24 µm arranged in a 4x4 array with series 236 kΩ quench resistors. The SiPM has a peak responsivity at 490 nm wavelength and a fill factor of 12.6 %. The digital SiPM generates an output 5-bit digital word that indicates the number of APDs triggered in the SiPM array at the rising edge of clock. Simulation results show that the digital SiPM can work at a maximum speed of 100 MS/s and uses 64.6 mW of power. The digital SiPM occupies an area of 0.38 mm 2 .
Keywords
Digital SiPM; Silicon photomultiplier (SiPM); Avalanche photodiode (APD); Photon counting; LiDAR; Segmentation
Disciplines
Electrical and Electronics | Electromagnetics and Photonics
Language
English
Repository Citation
Vinayaka, V.,
Namboodiri, S. P.,
Roy, A.,
Baker, R. J.
(2019).
Segmented Digital SiPM.
2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS), 2019
1118-1121.
Dallas, TX: Institute of Electrical and Electronics Engineers.
http://dx.doi.org/10.1109/MWSCAS.2019.8884970