Fast Neutron Irradiation Effects on Multiple Gallium Nitride (GaN) Device Reliability in Presence of Ambient Variations
Document Type
Conference Proceeding
Publication Date
4-28-2020
Publication Title
IEEE
First page number:
1
Last page number:
6
Abstract
Radiation-hard semiconductor devices are becoming more important for a growing number of nuclear and space applications. Gallium Nitride (GaN) semiconductor devices can be highly beneficial in this regard. In this paper, we report the electrical performance of multiple AlGaN/GaN deep UV LEDs irradiated by high fluence fast neutrons. The irradiation experiment was conducted in a newly enhanced beamline at the Los Alamos Neutron Science Center (LANSCE) from 2014-2016 with a maximum fluence of 2.41x1013 neutrons/cm2 over a 3-year span, in an temperature varying, semi-open outdoor housing. We continuously monitored the I-V characteristics of all GaN devices, and showed that they maintained proper I-V behaviors as the neutron fluence increased. Extensive data analysis further shows that effects of neutron irradiation fluence increment in a given day are actually smaller than that induced by daily temperature variation. Our experimental results facilitate the design of diagnostics systems such as multi-pixel imagers for high energy density physics experiments, and complex space electronics that must survive through both high fluence radiation and large orbital temperature variations.
Keywords
Gallium Nitride; Gan Semiconductors; Gallium; Neutron Radiation Effects; Radiation Effects; Radiation Hardness; Wide Bandgap; Temperature Effects
Disciplines
Electrical and Computer Engineering | Engineering
Language
English
Repository Citation
Soriano Oliveros, L.,
Valencia, H.,
Sun, K.,
Nelson, R.
(2020).
Fast Neutron Irradiation Effects on Multiple Gallium Nitride (GaN) Device Reliability in Presence of Ambient Variations.
IEEE
1-6.
http://dx.doi.org/10.1109/IRPS45951.2020.9129517
