MBE growth modeling of In desorption in InGaAs/GaAs compound semiconductor
A rate equation model is employed to investigate the surface dynamic processes such as In desorption, incorporation and segregation in the MBE growth of InGaAs and InGaN. In both cases, the agreement between our results and that of the experiment is good. In InGaAs growth, In desorption increases with increasing substrate temperature or group III–V over pressure ratio. The desorption process is observed to have two independent components, one arising from the physisorbed layer of In and the other from the surface of the crystal with activation energies of 0.18 and 2.6 eV, respectively. In InGaN MBE growth studies, In segregation is found to be negligible below 580°C. Above 640°C, the segregation dominates the surface kinetics. This temperature dependence is found to be independent of the fluxes. Activation energy for In segregation is found to be 2.9 eV.
Crystal growth; Gallium arsenide; Molecular beam epitaxy; Semiconductors
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MBE growth modeling of In desorption in InGaAs/GaAs compound semiconductor.
Journal of Crystal Growth, 251