Document Type
Article
Publication Date
1998
Publication Title
IEEE Transactions on Electron Devices
Volume
45
Issue
1
First page number:
336
Last page number:
338
Abstract
A new thermal oxidation model based on a rate equation approach with concentration dependent diffusion coefficient is proposed for ultrathin SiO2 for thicknesses of the order of 100 Å. The oxidation reaction of silicon is assumed to be dependent on the concentrations of unreacted silicon and oxygen. The results of oxide thickness versus oxidation time for various growth conditions and activation energies for diffusion coefficients are in agreement with various experimental data for O2 ambient.
Keywords
Diffusion; Elemental semiconductors; Oxidation; Oxide coating; Reaction kinetics theory; Semiconductor process modeling; Semiconductors; Silicon; Silicon compounds
Repository Citation
Gorantla, S.,
Muthuvenkatraman, S.,
Venkat, R.
(1998).
A Model for Thermal Growth of Ultrathin Silicon Dioxide in O2 Ambient: A Rate Equation Approach.
IEEE Transactions on Electron Devices, 45(1),
336-338.
https://digitalscholarship.unlv.edu/ece_fac_articles/17
Comments
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