Heuristic rules for group IV dopant site selection in III–V compounds
The use of column IV dopants in III–V compounds is of great interest because they are easy to handle and in the case of Si, readily available in most molecular beam epitaxy (MBE) chambers. A column IV dopant can act as a donor or an acceptor or both depending on its size relative to the cation and anion sites, the substrate orientation and the growth conditions. In this article, we present heuristic rules for predicting group IV dopant site selection in III–V compounds based on the relative covalent radii of the dopant to the host lattice sites, types and relative numbers of surface dangling bonds and the growth conditions. Preliminary predictions show excellent agreement with available experimental data.
Crystal growth; Molecular beam epitaxy; Silicon
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Dorsey, D. L.,
Heuristic rules for group IV dopant site selection in III–V compounds.
Journal of Crystal Growth, 175-176(1),