A Stochastic Model for Crystal-amorphous Transition in Molecular Beam Epistaxial Si (111)
Journal of Applied Physics
First page number:
Last page number:
Molecular beam epitaxial Si (111) grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal‐amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures in the range of 500–900 K and growth rate in the range of 0.1–3.0 Å/s. The agreement between our results and experimental observations is excellent.
Amorphous state; Amorphous substances; Crystal growth; Crystallization; Epitaxy; Molecular beam epitaxy; Phase transformations (Statistical physics); Silicon; Stacking faults; Stochastic Processes; Temperature dependence; Transition temperature
Use Find in Your Library, contact the author, or use interlibrary loan to garner a copy of the article. Publisher copyright policy allows author to archive post-print (author’s final manuscript). When post-print is available or publisher policy changes, the article will be deposited
Dorsey, D. L.
A Stochastic Model for Crystal-amorphous Transition in Molecular Beam Epistaxial Si (111).
Journal of Applied Physics, 80(11),