Title
The Origin of gallium desorption transients during AlGaAs/GaAs heterointerface formation by molecular beam epitaxy
Document Type
Article
Abstract
A Monte Carlo simulation study is performed to investigate the Ga desorption behavior at AlGaAs/GaAs heterointerfaces during growth by molecular beam epitaxy. The transients in Ga desorption rate upon opening/closing the Al shutter arise due to both the change in V/III flux ratio and the Al–Ga surface exchange mechanism. It is shown that the desired “steplike” variation in Ga desorption rate at each interface can be attained by a growth procedure employing a constant V/III flux ratio.
Keywords
III-V semiconductors; Aluminum compounds; Desorption; Epitaxy; Gallium arsenide; Gallium arsenide semiconductors; Heterojunctions; Interface structure; Molecular beam epitaxial growth; Molecular beam epitaxy; Monte Carlo methods; Reaction kinetics; Semiconductors—Junctions; Semiconductor growth; Semiconductor heterojunctions; Surface chemistry; Transition metal compounds
Permissions
Use Find in Your Library, contact the author, or use interlibrary loan to garner a copy of the article. Publisher copyright policy allows author to archive post-print (author’s final manuscript). When post-print is available or publisher policy changes, the article will be deposited
Citation Information
Mahalingam, K.,
Dorsey, D. L.,
Evans, K. R.,
Venkat, R.
(1997).
The Origin of gallium desorption transients during AlGaAs/GaAs heterointerface formation by molecular beam epitaxy.
Applied Physics Letters, 70(23),
3143-3145.
https://digitalscholarship.unlv.edu/ece_fac_articles/22