The Origin of Gallium Desorption Transients During AlGaAs/GaAs Heterointerface Formation By Molecular Beam Epitaxy
Applied Physics Letters
First page number:
Last page number:
A Monte Carlo simulation study is performed to investigate the Ga desorption behavior at AlGaAs/GaAs heterointerfaces during growth by molecular beam epitaxy. The transients in Ga desorption rate upon opening/closing the Al shutter arise due to both the change in V/III flux ratio and the Al–Ga surface exchange mechanism. It is shown that the desired “steplike” variation in Ga desorption rate at each interface can be attained by a growth procedure employing a constant V/III flux ratio.
III-V semiconductors; Aluminum compounds; Desorption; Epitaxy; Gallium arsenide; Gallium arsenide semiconductors; Heterojunctions; Interface structure; Molecular beam epitaxial growth; Molecular beam epitaxy; Monte Carlo methods; Reaction kinetics; Semiconductors—Junctions; Semiconductor growth; Semiconductor heterojunctions; Surface chemistry; Transition metal compounds
Use Find in Your Library, contact the author, or use interlibrary loan to garner a copy of the article. Publisher copyright policy allows author to archive post-print (author’s final manuscript). When post-print is available or publisher policy changes, the article will be deposited
Dorsey, D. L.,
Evans, K. R.,
The Origin of Gallium Desorption Transients During AlGaAs/GaAs Heterointerface Formation By Molecular Beam Epitaxy.
Applied Physics Letters, 70(23),