Title
The Origin of gallium desorption transients during AlGaAs/GaAs heterointerface formation by molecular beam epitaxy
Document Type
Article
Abstract
A Monte Carlo simulation study is performed to investigate the Ga desorption behavior at AlGaAs/GaAs heterointerfaces during growth by molecular beam epitaxy. The transients in Ga desorption rate upon opening/closing the Al shutter arise due to both the change in V/III flux ratio and the Al–Ga surface exchange mechanism. It is shown that the desired “steplike” variation in Ga desorption rate at each interface can be attained by a growth procedure employing a constant V/III flux ratio.
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Citation Information
Mahalingam, K.,
Dorsey, D. L.,
Evans, K. R.,
Venkat, R.
(1997).
The Origin of gallium desorption transients during AlGaAs/GaAs heterointerface formation by molecular beam epitaxy.
Applied Physics Letters, 70(23),
3143-3145.
https://digitalscholarship.unlv.edu/ece_fac_articles/22