Title

The Origin of gallium desorption transients during AlGaAs/GaAs heterointerface formation by molecular beam epitaxy

Document Type

Article

Publication Date

1997

Publication Title

Applied Physics Letters

Volume

70

Issue

23

First page number:

3143

Last page number:

3145

Abstract

A Monte Carlo simulation study is performed to investigate the Ga desorption behavior at AlGaAs/GaAs heterointerfaces during growth by molecular beam epitaxy. The transients in Ga desorption rate upon opening/closing the Al shutter arise due to both the change in V/III flux ratio and the Al–Ga surface exchange mechanism. It is shown that the desired “steplike” variation in Ga desorption rate at each interface can be attained by a growth procedure employing a constant V/III flux ratio.

Keywords

III-V semiconductors; Aluminum compounds; Desorption; Epitaxy; Gallium arsenide; Gallium arsenide semiconductors; Heterojunctions; Interface structure; Molecular beam epitaxial growth; Molecular beam epitaxy; Monte Carlo methods; Reaction kinetics; Semiconductors—Junctions; Semiconductor growth; Semiconductor heterojunctions; Surface chemistry; Transition metal compounds

Permissions

Use Find in Your Library, contact the author, or use interlibrary loan to garner a copy of the article. Publisher copyright policy allows author to archive post-print (author’s final manuscript). When post-print is available or publisher policy changes, the article will be deposited

Identifier

DOI: http://dx.doi.org/10.1063/1.119115

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