Title

Electro-optical Properties of All-oxide P-CuAlO2/n-ZnO: Al Transparent Heterojunction Thin Film Diode Fabricated on Glass Substrate

Document Type

Article

Publication Date

3-2008

Publication Title

Central European Journal of Physics

Volume

6

Issue

1

First page number:

57

Last page number:

63

Abstract

We report on the fabrication of all transparent heterojunction thin film diodes of the form glass/n-ZnO: Al/p-CuAlO2 produced by a combinatorial chemical and physical technique and on a study of their electro-optical properties. The n-ZnO: Al layer was deposited by a sol-gel-dip-coating process whereas the p-CuAlO2 layer was deposited by direct current sputtering techniques. The diode structure, with a total thickness of 1100 nm showed around 60% transmittance in the visible region. The current-voltage characteristics of the device showed a rectifying nature, with a low turn-on voltage around 0.8 V, having a rectification ratio > 50 at ± 2 V. The low turn-on voltage and moderate visible transmittance of the transparent diode indicate its potential application in the field of “Transparent” or “Invisible Electronics”.

Keywords

Coating processes; Magnetron sputtering; Transparent semiconductors; Voltage

Disciplines

Controls and Control Theory | Electrical and Computer Engineering | Electrical and Electronics | Signal Processing | Systems and Communications

Language

English

Permissions

Use Find in Your Library, contact the author, or interlibrary loan to garner a copy of the item. Publisher policy does not allow archiving the final published version. If a post-print (author's peer-reviewed manuscript) is allowed and available, or publisher policy changes, the item will be deposited.

Identifier

DOI: http://dx.doi.org/10.2478/s11534-008-0005-5

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