Capacitance-voltage characterization of thin film nanoporous alumina templates
This paper presents the results of capacitance–voltage characterization of thin film alumina templates fabricated on silicon substrates. Such templates are of significant interest for the low-cost implementation of semiconductor and metal nanostructure arrays, as well as for potential nanostructure integration with silicon electronics. Thin film alumina templates created on silicon substrates under different anodization conditions were investigated. Capacitance–voltage measurements indicate that the template/silicon interface, important for nanostructure integration on silicon, to be of good device quality.
Nanostructure integration on silicon; Nanoporous dielectric; Nanostructure C–V characteristics
Electrical and Computer Engineering | Engineering | Signal Processing
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Capacitance-voltage characterization of thin film nanoporous alumina templates.
Microelectronics Journal, 37(8),