Capacitance-voltage characterization of thin film nanoporous alumina templates

Document Type



This paper presents the results of capacitance–voltage characterization of thin film alumina templates fabricated on silicon substrates. Such templates are of significant interest for the low-cost implementation of semiconductor and metal nanostructure arrays, as well as for potential nanostructure integration with silicon electronics. Thin film alumina templates created on silicon substrates under different anodization conditions were investigated. Capacitance–voltage measurements indicate that the template/silicon interface, important for nanostructure integration on silicon, to be of good device quality.


Nanostructure integration on silicon; Nanoporous dielectric; Nanostructure C–V characteristics


Electrical and Computer Engineering | Engineering | Signal Processing


Use Find in Your Library, contact the author, or interlibrary loan to garner a copy of the item. Publisher policy does not allow archiving the final published version. If a post-print (author's peer-reviewed manuscript) is allowed and available, or publisher policy changes, the item will be deposited

UNLV article access

Search your library