Document Type

Article

Abstract

A Monte Carlo simulation study is performed to investigate the Ga desorption behavior during AlGaAs-on-GaAs heterointerface formation by molecular beam epitaxy. The transients in the Ga desorption rate upon opening the Al shutter are shown to be associated with the concurrent reduction in the V/III flux ratio. Monte Carlo simulations employing a constant V/III flux ratio yield a “steplike” variation in the Ga desorption rate with the resulting interfaces closer in abruptness to the ideal AlGaAs-on-GaAs interface. Further details on the stoichiometry of the interface and its relationship with predicted Ga desorption profiles is presented.

Keywords

Electron-stimulated desorption; Gallium arsenide semiconductors; Molecular beam epitaxy; Semiconductors

Disciplines

Computer Engineering | Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials

Permissions

© 1997 American Vacuum Society

UNLV article access

Search your library

Share

COinS