A Monte Carlo simulation study is performed to investigate the Ga desorption behavior during AlGaAs-on-GaAs heterointerface formation by molecular beam epitaxy. The transients in the Ga desorption rate upon opening the Al shutter are shown to be associated with the concurrent reduction in the V/III flux ratio. Monte Carlo simulations employing a constant V/III flux ratio yield a “steplike” variation in the Ga desorption rate with the resulting interfaces closer in abruptness to the ideal AlGaAs-on-GaAs interface. Further details on the stoichiometry of the interface and its relationship with predicted Ga desorption profiles is presented.
Electron-stimulated desorption; Gallium arsenide semiconductors; Molecular beam epitaxy; Semiconductors
Computer Engineering | Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials
© 1997 American Vacuum Society
Dorsey, D. L.,
Evans, K. R.,
Gallium desorption behavior at AlGaAs/GaAs heterointerfaces during high-temperature molecular beam epitaxy.
Journal of Vacuum Science & Technology B, 15(4),