Document Type

Article

Publication Date

8-1997

Publication Title

Journal of Vacuum Science & Technology B

Volume

15

Issue

4

First page number:

1159

Last page number:

1162

Abstract

A Monte Carlo simulation study is performed to investigate the Ga desorption behavior during AlGaAs-on-GaAs heterointerface formation by molecular beam epitaxy. The transients in the Ga desorption rate upon opening the Al shutter are shown to be associated with the concurrent reduction in the V/III flux ratio. Monte Carlo simulations employing a constant V/III flux ratio yield a “steplike” variation in the Ga desorption rate with the resulting interfaces closer in abruptness to the ideal AlGaAs-on-GaAs interface. Further details on the stoichiometry of the interface and its relationship with predicted Ga desorption profiles is presented.

Keywords

Electron-stimulated desorption; Gallium arsenide semiconductors; Molecular beam epitaxy; Semiconductors

Disciplines

Computer Engineering | Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials

Language

English

Permissions

© 1997 American Vacuum Society

Identifier

DOI: 10.1116/1.589432

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