Influence of Growth Conditions on the As Antisites, Asga0 and Asga+ Concentrations in the Low Temperature GaAs MBE Growth: A First Theoretical Study

Authors

Natarajan Krishnan, University of Nevada, Las VegasFollow
Rama Venkat, University of Nevada Las Vegas, Department of Electrical & Computer EngineeringFollow
Donald L. Dorsey, Air Force Research LaboratoryFollow

Document Type

Conference Proceeding

Publication Date

1999

Publication Title

Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X), June 1-June 5 1998: IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC

Publisher

IEEE

First page number:

109

Last page number:

112

Abstract

A novel theoretical investigation is employed to study the influence of surface dynamics in low temperature MBE growth of GaAs. A kinetic growth model along with the charge neutrality equation is used to find the distribution of As antisites between the neutral and charged species using the bulk Ga vacancy concentrations obtained from simulations for the first time. The experimentally observed temperature and as flux dependencies of the As antisite concentrations are successfully reproduced by the model. The As_Ga⁰ and As_Ga⁺ concentrations saturate with As flux for a given temperature due to saturation of an amorphous, physisorbed As surface layer which acts as the reservoir for As antisite incorporation. The As antisite concentration saturates at lower value for higher temperature due to larger evaporation of As antisite from the crystalline state. It is observed that both As_Ga⁰ and As_Ga⁺ concentrations decrease with increase in temperature. While the decrease of As_Ga⁰ concentration with temperature is related to the direct evaporation of As antisite from the crystalline state, the decrease of As_ga ⁺ is related to a decrease in the Ga vacancy concentration

Keywords

Gallium arsenide; Molecular beam epitaxy; Semiconductors; Semiconductors—Defects

Disciplines

Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials

Language

English

Permissions

Use Find in Your Library, contact the author, or interlibrary loan to garner a copy of the item. Publisher policy does not allow archiving the final published version. If a post-print (author's peer-reviewed manuscript) is allowed and available, or publisher policy changes, the item will be deposited.

Repository Citation

Krishnan, N., Venkat, R., Dorsey, D. L. (1999). Influence of Growth Conditions on the As Antisites, Asga0 and Asga+ Concentrations in the Low Temperature GaAs MBE Growth: A First Theoretical Study. Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X), June 1-June 5 1998: IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC 109-112. IEEE.