A 2-dimensional self-consistent numerical-model for high electron-mobility transistor
IEEE Transactions on Electron Devices
First page number:
Last page number:
A new two-dimensional self-consistent numerical model for a high-electron-mobility transistor (HEMT) is presented. In previous two-dimensional models, the quantization of electrons in the quantum well has been treated by using a triangular well approximation in which the width of the quantum well is assumed to be zero and the quantized electrons are assumed to reside right at the heterojunction. The authors do not make the above assumptions. Instead, the spatial spreading of the electron concentration in the quantum well normal to the heterojunction is taken into account by solving Schrodinger's and Poisson's equations self-consistently. The Boltzmann transport equation, in the form of a current continuity equation, and an energy balance equation are solved to obtain the transient and steady-state transport behaviour. The I d-Vd characteristics, transconductance, gate capacitance, and unity-gain frequency of a single quantum-well HEMT are discussed. Also discussed are the dependencies of the device performance on the gate length and the doping concentration of the AlGaAs layer.
Gallium arsenide semiconductors; Modulation-doped field-effect transistors; Molecular beam epitaxy
Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials
Use Find in Your Library, contact the author, or interlibrary loan to garner a copy of the item. Publisher policy does not allow archiving the final published version. If a post-print (author's peer-reviewed manuscript) is allowed and available, or publisher policy changes, the item will be deposited.
A 2-dimensional self-consistent numerical-model for high electron-mobility transistor.
IEEE Transactions on Electron Devices, 38(4),