Molecular beam epitaxial Si (111) grown below a certain temperature result in amorphous structure due to the limited surface mobility of atoms in finding correct epitaxial sites. In spite of many experimental and theoretical studies, the mechanism of crystal‐amorphous transition and its dynamics related to the growth conditions are not well understood. In this article, we present a theoretical model based on the formation of stacking fault like defects as a precursor to the amorphous transition of the layer. The model is simulated based on a stochastic model approach and the results are compared to that of experiments for temperatures in the range of 500–900 K and growth rate in the range of 0.1–3.0 Å/s. The agreement between our results and experimental observations is excellent.
Amorphous semiconductors; Epitaxy; Molecular beam epitaxy; Semiconductors
Electronic Devices and Semiconductor Manufacturing | Other Electrical and Computer Engineering | Other Materials Science and Engineering | Semiconductor and Optical Materials
© 1996 American Institute of Physics [This article is copyrighted as indicated in the abstract. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions.
Dorsey, D. L.
A stochastic model for crystal-amorphous transition in low temperature molecular beam epitaxial Si(111).
Journal of Applied Physics, 80(11),
Electronic Devices and Semiconductor Manufacturing Commons, Other Electrical and Computer Engineering Commons, Other Materials Science and Engineering Commons, Semiconductor and Optical Materials Commons