MBE doping kinetics: A Rate equation study
A rate equation model based on the master equation is developed for the study of MBE doping kinetics. The model includes elementary surface processes such as adsorption, evaporation and migration of atoms. The model is applied to the study of the surface segregation phenomenon during the In doping of Si. The doping studies were performed for the following growth conditions: T in the range 500 -750'C; a growth rate of 1 tm/hr.; and a flux ratio, Jli/Jsi equal to 2.0 x 10'. The predicted sticking coefficient of In versus TSobtained shows excellent agreement with experiments. The sticking coefficient decreases with T due to surface segregation aided evaporation of In at higher temperature. The results of dopant depth profile also show excellent qualitative agreement with experiments. The surface segregation of In occurs due to a strong repulsive interaction between In and the host lattice. The results of this study show that there is a dopant depleted zone (DDZ) where the In concentration is lower than both the bulk and the top surface layer. The observed DDZ matches with that observed in experiments.
Crystal growth; Indium; Molecular beam epitaxy; Semiconductor doping; Silicon
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MBE doping kinetics: A Rate equation study.
Proceedings of Materials Research Society, 317
Materials Research Society.