A Theoretical study of amorphouse-crystalline transition in SI  MBE growth
The amorphous crystalline transition temperature for Si MBE growth is higher for  growth than for  growth. The mechanism for the growth of amorphous Si in  growth is thought to be due to the possibility of of direct formation of stacking faults on the  surface. To investigate this mechanism, a kinetic model describing the amorphous-crystalline transition in low temperature Si  MBE growth is proposed. The model allows Si atoms to incorporate at three types of sites: A, B and C where A is the triply covalent bonded correct diamond site, B is the triply covalent bonded wrong hcp site and C is the singly covalent bonded wrong site. The model allows for the migration of atoms from a wrong site to a nearest neighbor correct site through Arrhenius type rate equations. The migration from B -> A is assumed 1000 times weaker than the reverse migration process. Similarly migrations from C -> A are assumed 106 time stronger than the reverse migration. All possible migrations are considered with different rates. At the high temperature, the model will allow the growth of a perfect diamond cubic structure with correct ordering of layers AaBbCc etc. A stochastic model describing the above kinetic model is developed based on the master equation approach and random distribution approximation. The low temperature MBE growth of Si  is investigated using this model. The results of the model are compared with existing experimental work . The results are in good agreement. The study shows that the kinetics of the site correcting migration process well describes the observed amorphous-crystalline transition in  Si MBE growth.
Crystal growth; Crystal lattices; Molecular beam epitaxy; Semiconductors; Silicon
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Dorsey, D. L.,
Das, S. G.
A Theoretical study of amorphouse-crystalline transition in SI  MBE growth.
Proceedings of the Materials Research Society, 280
Materials Research Society.