Title

Structural, electrical, and thermoelectric properties of CrSi2 thin films

Document Type

Article

Publication Date

10-31-2013

Publication Title

Thin Solid Films

Volume

545

First page number:

100

Last page number:

105

Abstract

Chromium silicide (CrSi2) thermoelectric thin films with two different thicknesses, 1 μm and 0.1 μm, were deposited using radio frequency magnetron sputtering on glass substrates. These films were characterized after deposition and then after 300–600 °C anneals using X-ray diffraction and Energy dispersive X-ray spectroscopy. The Seebeck coefficient and electrical resistivity were measured. The compositions of the sputtered films were found to be close to the sputtering target stoichiometry. The annealing conditions and variations of thickness had a great influence on the thermoelectric performance of the films. The 0.1 μm p-type films annealed in an argon atmosphere at 400 °C exhibited the largest power factor of 1.0 × 10− 3 W/(K2·m).

Keywords

Silicides; Sputtering; Thermoelectric power

Disciplines

Controls and Control Theory | Electrical and Computer Engineering | Electrical and Electronics | Electromagnetics and Photonics | Power and Energy | Signal Processing | Systems and Communications

Language

English

Permissions

Use Find in Your Library, contact the author, or interlibrary loan to garner a copy of the item. Publisher policy does not allow archiving the final published version. If a post-print (author's peer-reviewed manuscript) is allowed and available, or publisher policy changes, the item will be deposited.

Identifier

DOI: 10.1016/j.tsf.2013.07.040

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