Document Type

Article

Publication Date

8-5-2010

Publication Title

Physical Review B

Publisher

American Physical Society

Volume

82

Issue

7

First page number:

075107-1

Last page number:

75107-11

Abstract

X-ray absorption near edge structure (XANES) at the cadmium L3 and oxygen K edges for CdO thin films grown by pulsed laser deposition method, is interpreted within the real-space multiple scattering formalism, FEFF code. The features in the experimental spectra are well reproduced by calculations for a cluster of about six and ten coordination shells around the absorber for L3 edge of Cd and K edge of O, respectively. The calculated projected electronic density of states is found to be in good agreement with unoccupied electronic states in experimental data and allows to conclude that the orbital character of the lowest energy of the conductive band is Cd 5s-O 2p[sigma]*. The charge transfer has been quantified and not purely ionic bonding has been found. Combined XANES and resonant inelastic x-ray scattering measurements allow us to determine the direct and indirect band gap of investigated CdO films to be ~2.4 eV and ~0.9 eV, respectively.

Keywords

Cadmium crystals; Semiconductor films; Transparent semiconductors; X-ray absorption near edge structure

Disciplines

Analytical Chemistry | Atomic, Molecular and Optical Physics | Materials Chemistry | Physical Chemistry | Physics

Language

English

Comments

Refer to PDF file for exact formulas.

Permissions

Copyright American Physical Society. Used with permission.

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