Document Type

Article

Publication Date

3-2008

Publication Title

Physical Review B

Publisher

American Physical Society

Volume

77

Issue

9

First page number:

094123-1

Last page number:

094123-9

Abstract

Synchrotron x-ray diffraction and diamond-anvil cell techniques were used to characterize pressure induced structural modifications in gallium oxide. Gallium oxide was studied on compression up to 70 GPa and on the following decompression. The effect of the pressure-transmitting medium on the structural transformations was investigated in two sets of compression and decompression runs, one with nitrogen as a quasihydrostatic pressure-transmitting medium and the other in nonhydrostatic pressure conditions. The x-ray diffraction data showed gradual phase transition from a low-density, monoclinic β-Ga2O3 to a high-density, rhombohedral α-Ga2O3. With the use of nitrogen as a pressure transmitting medium, the β- to α-Ga2O3 transition begins at about 6.5–7 GPa and extends up to ∼40 GPa, confirming recent theoretical calculations. This pressure-driven transition is irreversible and the material decompressed from 70 GPa to ambient conditions was composed, in both sets of experimental runs, of α-Ga2O3 only. A Birch-Murnaghan fit of the unit cell volume as a function of pressure yielded a zero pressure bulk modulus K0=199(6) GPa, and its pressure derivative K0=3.1(4) for theβ-Ga2O3 phase, and K0=220(9) GPa and K0=5.9(6) for the α-Ga2O3 phase for the experiments performed in quasihydrostatic compression conditions. When for the same experiment K0 is held at 4, then the bulk modulus values are 184(3) and 252(14) GPa for β-Ga2O3 and the α-Ga2O3, respectively. We compare the results of this work with our previous studies on the high-pressure behavior of nanocrystalline gallium oxide

Controlled Subject

Gallium compounds; High pressure crystallography; Nanocrystals

Disciplines

Biological and Chemical Physics | Chemistry | Inorganic Chemistry | Materials Chemistry | Physical Chemistry

Language

English

Permissions

Copyright American Physical Society. Used with permission.

Rights

IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/

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