Evaluation of new materials for electron and hole transport layers in perovskite-based solar cells through SCAPS-1D simulations
Conventional electron and hole transport materials for perovskites, such as TiO2 and Spiro-OMeTAD, have been known to be susceptible to light induced degradation. Some studies have also suggested that the hysteresis effect observed in perovskite based devices could be correlated, in part, with light-induced defects at tio2/perovskite interface. In this study, several alternative electron and hole transport layers for planar solar cell devices based on CH3NH3PbI3 perovskite were explored with SCAPS-1D simulations. Due to its tunable bandgap and high electron affinity, ZnOS has been shown as best replacement for TiO2. NiO and CsSnI3 are good potential alternatives for Spiro-OMeTAD to address the stability issues. © 2016 IEEE.
Evaluation of new materials for electron and hole transport layers in perovskite-based solar cells through SCAPS-1D simulations.
Conference Record of the IEEE Photovoltaic Specialists Conference, November
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