Baseline Models for Three Types of CIGS Cells: Effects of Buffer Layer and Na Content
Document Type
Article
Publication Date
6-10-2018
Publication Title
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion
Volume
2018
First page number:
3013
Last page number:
3018
Abstract
Three types of CIGS cells were fabricated: 1) with CdS buffer; 2) with CdS buffer and limited sodium; and 3) with Zn(O,S) buffer. Baseline numerical models were developed with compositional grading based on GDOES data. Calculations were compared to W, QE, and CV measurements. Cells with lower sodium content exhibited higher gallium content and poor performance due to increased recombination. Similar but slightly lower efficiencies were observed for Zn(O,S) buffer cells compared CdS buffer cells. Results indicate that a highly doped p-type layer near the CIGS /buffer interface and graded defect profiles play important roles in accounting for the data.
Keywords
Cd-free buffer; CIGS cells; Device simulation; Sodium
Disciplines
Mechanical Engineering
Language
English
Repository Citation
Nardone, M.,
Patikirige, Y.,
Walkons, C.,
Bansal, S.,
Friedlmeier, T. M.,
Kweon, K. E.,
Varley, J. B.,
Lordi, V.
(2018).
Baseline Models for Three Types of CIGS Cells: Effects of Buffer Layer and Na Content.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, 2018
3013-3018.
http://dx.doi.org/10.1109/PVSC.2018.8548167