Behavior of Na and RbF-Treated CdS/Cu(In,Ga)Se2 Solar Cells with Stress Testing under Heat, Light, and Junction Bias

Document Type

Article

Publication Date

12-18-2020

Publication Title

Physica Status Solidi - Rapid Research Letters

Volume

15

Issue

2

First page number:

1

Last page number:

10

Abstract

© 2021 Wiley-VCH GmbH The effects of Na and RbF alkali treatment on the metastability behavior of CdS/Cu(In,Ga)Se2 solar cells are investigated with stress factors of heat, junction bias, and illumination. Four device types with and without Na or RbF treatments are subjected to heat- and light-soaking under open- and short-circuit (OC, SC) junction bias. Low-Na devices show a higher bandgap due to increased minimum Ga content, higher recombination current, and lower open-circuit voltage (VOC). Devices with RbF post-deposition treatment (PDT) show an improvement in net doping density ≈1016 cm−3, VOC, and efficiency. Heat- and light-soaking under OC junction bias provokes an increase in net carrier concentration and VOC irrespective of the alkali treatments. After SC stress, a decrease in VOC and net carrier concentration is observed, which can be stabilized by RbF-PDT. An increase in Na and oxygen concentration in CIGS is observed for baseline and low-Na devices, respectively, after OC stress. The oxygen concentration in CdS decreases after heat- and light-soaking for devices without RbF-PDT, whereas it remains unchanged for devices with RbF-PDT. The atomic concentration profiles in CIGS significantly stabilize as a function of stress with the addition of RbF-PDT.

Keywords

Accelerated stress testing; Open-circuit; Post-deposition treatment; Short-circuit; Stability

Disciplines

Energy Systems | Heat Transfer, Combustion

Language

English

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