Heat- And Light-Soaking Behavior of Rbf-Treated CU(In,GA)se2 Solar Cells With Two Different Buffer Layers

Document Type

Article

Publication Date

1-28-2022

Publication Title

Journal of Materials Research

Volume

37

Issue

2

First page number:

436

Last page number:

444

Abstract

Degradation in RbF post-deposition-treated (PDT) CIGS solar cells under heat/light/bias stress is evaluated for two different buffers, CdS and Zn(O,S). Initial efficiency of baseline CdS buffer devices is about 17.7% with and without RbF PDT. However, Zn(O,S) buffer devices show considerable improvement in net carrier concentration (NCV), VOC, and efficiency from 16.3 to 17.9% with RbF PDT. Under accelerated stress tests, CdS buffer devices show an increase in VOC under open circuit (OC) light soaking irrespective of the alkali treatments, and the devices are relatively stable under short circuit (SC) stress. Zn(O,S) buffer devices, however, show a decrease in VOC under all stress conditions irrespective of the alkali treatments. All performance metrics for Zn(O,S) buffer devices typically decreased with stress, resulting in significant efficiency loss. Device models show that an increase in recombination at the CIGS/Zn(O,S) interface and near interface doping can explain the degradation in these devices. Graphical abstract: [Figure not available: see fulltext.]

Keywords

Defects; Interface; Modeling; Photovoltaic; Thin film

Disciplines

Heat Transfer, Combustion

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