Robust Magnetoelectric Effect in the Decorated Graphene/In2Se3 Heterostructure
ACS Applied Materials and Interfaces
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© The magnetoelectric effect is a fundamental physical phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM)-decorated graphene layer via a ferroelectrically induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon-p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in the TM-decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of ferroelectrically controlled magnetism in two-dimensional (2D) materials.
D-orbital shifts; Ferroelectric-controlled magnetism; First-principles calculations; Heterostructure; Magnetoelectric effect
Chemistry | Materials Chemistry
Robust Magnetoelectric Effect in the Decorated Graphene/In2Se3 Heterostructure.
ACS Applied Materials and Interfaces, 13(2),