Electronic structure of the Zn(O,S)/Cu(In,Ga)Se2 thin-film solar cell interface
The electronic band alignment of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency thin-film solar cells was derived using X-ray photoelectron spectroscopy, ultra-violet photoelectron spectroscopy, and inverse photoemission spectroscopy. Similar to the CdS/Cu(In,Ga)Se2 system, we find an essentially flat (small-spike) conduction band alignment (here: a conduction band offset of (0.09 ± 0.20) eV), allowing for largely unimpeded electron transfer and forming a likely basis for the success of high-efficiency Zn(O,S)-based chalcopyrite devices. Furthermore, we find evidence for multiple bonding environments of Zn and O in the Zn(O,S) film, including ZnO, ZnS, Zn(OH)2, and possibly ZnSe. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.
Mansfield, L. M.,
Duncan, D. A.,
Rosenberg, S. G.,
Electronic structure of the Zn(O,S)/Cu(In,Ga)Se2 thin-film solar cell interface.
Progress in Photovoltaics: Research and Applications, 24(8),