Angstrom-Resolved Interfacial Structure in Buried Organic-Inorganic Junctions
Document Type
Article
Publication Date
8-24-2021
Publication Title
Physical Review Letters
Volume
127
Issue
9
First page number:
1
Last page number:
6
Abstract
Charge transport processes at interfaces play a crucial role in many processes. Here, the first soft x-ray second harmonic generation (SXR SHG) interfacial spectrum of a buried interface (boron–Parylene N) is reported. SXR SHG shows distinct spectral features that are not observed in x-ray absorption spectra, demonstrating its extraordinary interfacial sensitivity. Comparison to electronic structure calculations indicates a boron-organic separation distance of 1.9 Å, with changes of less than 1 Å resulting in easily detectable SXR SHG spectral shifts (ca. hundreds of milli-electron volts).
Controlled Subject
X-rays; Electronic structure
Disciplines
Electrical and Electronics | Statistical, Nonlinear, and Soft Matter Physics
Repository Citation
Schwartz, C. P.,
Raj, S. L.,
Jamnuch, S.,
Hull, C. J.,
Miotti, P.,
Lam, R. K.,
Nordlund, D.,
Uzundal, C. B.,
Pemmaraju, C. D.,
Mincigrucci, R.,
Foglia, L.,
Simoncig, A.,
Coreno, M.,
Masciovecchio, C.,
Poletto, L.,
Principi, E.,
Pascal, T. A.,
Drisdell, W. S.,
Saykally, R. J.
(2021).
Angstrom-Resolved Interfacial Structure in Buried Organic-Inorganic Junctions.
Physical Review Letters, 127(9),
1-6.
http://dx.doi.org/10.1103/PhysRevLett.127.096801