Master of Science (MS)
Health Physics and Diagnostic Sciences
First Committee Member
Number of Pages
The response of a p-type diode detector for use in patient dose monitoring in photon and electron fields was evaluated for a number of commonly-encountered clinical parameters. Effects of energy, field size, source-to-surface distance, presence of beam modifiers, beam orientation, and temperature were investigated. Shielding effects and batch variations were also examined. In most cases, diode performance was in good agreement with manufacturer's specifications and/or the results of others using similar detectors. Variations in excess of +/-12 % were observed in high-energy wedged fields over the source-to-surface distances investigated. Reductions in local dose directly behind the diode due to electron shielding ranged from 8 to 12%. Entrance and exit dose measurements were made on patients undergoing treatment for lung or prostate carcinoma. Differences in measured and calculated exit doses could be improved by the inclusion of tissue heterogeneity correction factors in the treatment planning algorithm.
Characterization; Detectors; Dosimetry Semiconductor; Silicon; Type; Vivo
Oncology; Diagnostic imaging
University of Nevada, Las Vegas
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Haq, Kamran Ul, "Characterization of p-type silicon semiconductor detectors for use in in vivo dosimetry" (2000). UNLV Retrospective Theses & Dissertations. 1161.