Master of Science (MS)
Electrical and Computer Engineering
First Committee Member
Number of Pages
In this work, a novel metal-insulator-metal (MIM) capacitor process is introduced and integrated in a Copper Interconnect technology, whose smallest feature size is 0.18mum process, which has good yield, reliability and repeatability. The MIM uses a one-photomask process and hence is termed as the Low-cost-integration (LCI) MIM. The LCI MIM uses copper as the bottom electrode, plasma enhanced silicon nitride as the dielectric, and Tantalum nitride as the top electrode. The target capacitance density is 1.5fF/mum2. The target leakage current is 1e-7A/cm2 at 3.3V at 125Ã‚Â°C. The maximum operating voltages that the MIM is designed for is 5V. The voltage linearity is desired to be less than 100ppm/v; The purpose of the study is to determine the feasibility of integrating the low-cost-integration (LCI) MIM capacitor and to characterize the device to ensure that it meets the above mentioned target values for the various parameters. This is done by electrically characterizing the capacitor for the capacitance change with voltage, the leakage current at accelerated voltages and the time-dependent-dielectric breakdown (TDDB) under various electric fields. (Abstract shortened by UMI.).
Characterization; Copper; Cvd; Dielectric; Electrical; Enhanced; Nitride; Plasma; Silicon
University of Nevada, Las Vegas
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Irudayam, Amudha Regina, "Electrical characterization of plasma-enhanced Cvd silicon nitride dielectric on copper" (2001). UNLV Retrospective Theses & Dissertations. 1287.