Award Date

1-1-2003

Degree Type

Thesis

Degree Name

Master of Engineering (ME)

Department

Electrical and Computer Engineering

First Committee Member

Rama Venkat

Number of Pages

66

Abstract

A rate equation model including all physically relevant surface processes is developed for the study of In segregation in InGaN and Mg segregation in Mg-GaN MBE growth. In InGaN growth, the simulations were carried for a variety of growth conditions spanning the growth parameter space: substrate temperature in the range of 500--700°C: Ga flux in the range of 1.17--8.98 nm/min: In flux in the range of 0.39--28.74 nm/min and N flux in the range of 4.7--12 nm/min. Results of In incorporation obtained from simulations are within 1% agreement with the experiments reported in the literature. In segregation is found to be negligible below 580°C . Above 640°C, the segregation dominates the kinetics. This temperature dependence is found to be independent of the fluxes. In Mg-GaN growth, simulations were carried for various growth temperatures in the range of 600--750°C with constant flux rates of Mg, Ga and N. For the given flux rates, it is found that Mg segregates to the surface with the increase in temperature. Above 750°C a dopant depleted zone is formed below the surface layer. Results obtained from simulations are in good qualitative agreement with the experimental data.

Keywords

Beam; Epitaxy; Gallium; Gan; Grown; Indium; Ingan; Kinetics; Magnesium Molecular; Nitride; Segregation; Study; Theoretical

Controlled Subject

Electrical engineering; Materials science

Disciplines

Higher Education

File Format

pdf

File Size

1.40 MB

Degree Grantor

University of Nevada, Las Vegas

Language

English

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