Master of Engineering (ME)
Electrical and Computer Engineering
First Committee Member
Number of Pages
A rate equation model including all physically relevant surface processes is developed for the study of In segregation in InGaN and Mg segregation in Mg-GaN MBE growth. In InGaN growth, the simulations were carried for a variety of growth conditions spanning the growth parameter space: substrate temperature in the range of 500--700Ã‚Â°C: Ga flux in the range of 1.17--8.98 nm/min: In flux in the range of 0.39--28.74 nm/min and N flux in the range of 4.7--12 nm/min. Results of In incorporation obtained from simulations are within 1% agreement with the experiments reported in the literature. In segregation is found to be negligible below 580Ã‚Â°C . Above 640Ã‚Â°C, the segregation dominates the kinetics. This temperature dependence is found to be independent of the fluxes. In Mg-GaN growth, simulations were carried for various growth temperatures in the range of 600--750Ã‚Â°C with constant flux rates of Mg, Ga and N. For the given flux rates, it is found that Mg segregates to the surface with the increase in temperature. Above 750Ã‚Â°C a dopant depleted zone is formed below the surface layer. Results obtained from simulations are in good qualitative agreement with the experimental data.
Beam; Epitaxy; Gallium; Gan; Grown; Indium; Ingan; Kinetics; Magnesium Molecular; Nitride; Segregation; Study; Theoretical
Electrical engineering; Materials science
University of Nevada, Las Vegas
If you are the rightful copyright holder of this dissertation or thesis and wish to have the full text removed from Digital Scholarship@UNLV, please submit a request to firstname.lastname@example.org and include clear identification of the work, preferably with URL.
Stanley, Irena Vidhya Mabel, "Theoretical study of segregation kinetics of indium in indium gallium nitride and magnesium in magnesium-gallium nitride grown by molecular beam epitaxy" (2003). UNLV Retrospective Theses & Dissertations. 1510.
IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/