Award Date

1-1-2003

Degree Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical and Computer Engineering

First Committee Member

Rama Venkat

Number of Pages

80

Abstract

The study of subthreshold behavior of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is critically important in the case of submicron devices for the successful design and implementation of digital circuits. Fin Field Effect Transistor (FinFET) is considered to be an alternate MOSFET structure in the deep sub-micron regime. A 3D Poisson equation solver is employed to study the subthreshold behavior of FinFET. Based on potential distribution inside the fin, the appropriate band bending and the subthreshold value called the S-factor is calculated. It is observed that the S-factor of the device increases as the channel width, Tfin increases. This is attributed to the fact that the change in the band bending is less than the change in the applied gate voltage. This is only a first order analysis; hence the device is simulated in a device simulator Taurus. It is observed that the S-factor increases exponentially for channel lengths Lg < 1.5Tfin. Further, for a constant Lg, the S factor is observed to increase as Tfin increases. An empirical relationship between S, Lg and Tfin is developed based on the simulation results, which can be used as a rule of thumb for determining the S-factor of devices.

Keywords

Behavior; Finfet; Study; Subthreshold

Controlled Subject

Electrical engineering; Physics

File Format

pdf

File Size

2007.04 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

Permissions

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Identifier

https://doi.org/10.25669/9ip7-6oho


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