Master of Science (MS)
Electrical and Computer Engineering
First Committee Member
Number of Pages
The thesis describes novel semiconductor quantum wire infrared photodetectors in the long- and very long-wavelength regions. The infrared photodetectors are based on intersubband transitions in semiconductor quantum wires and have the potential for higher operational temperature, increased signal-to-noise ratio, reduced dark current, wider spectral range and sensitivity to normal incident radiation. The quantum wire IR detectors were implemented using a nonlithographic nanostructure fabrication technique that is capable of producing large arrays of semiconductor quantum wires of a variety of materials and on different substrates. The operational principles, design procedure as well as the implementation of the quantum wire photodetectors using electrochemical anodization will be described.
Fabrication; Infrared; Nonlithographic; Photodetector; Quantum; Semiconductor; Wire
University of Nevada, Las Vegas
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Singaraju Venkata Sai, Pavan Kumar, "Fabrication of nonlithographic semiconductor quantum wire infrared photodetector" (2004). UNLV Retrospective Theses & Dissertations. 1699.
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