Award Date

1-1-2005

Degree Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical and Computer Engineering

First Committee Member

Biswajit Das

Number of Pages

54

Abstract

The antidot system is an interesting material for applications in GMR (Giant Magnetoresistance) device technology. Such devices have been the subject of investigation for its physics during the past fifteen years; however there has not been any focus towards application in GMR technology. The objective of this thesis is to develop a optimum device configuration as well as process technology for GMR applications of antidot structures. This thesis describes two different non-lithographic techniques for the fabrication of nickel based antidot systems. The first technique uses an alumina template as a mask to etch holes on the underneath nickel. Preliminary data show a 100 % change in magnetoresistance at room temperature at very low magnetic fields, making it highly suitable for device applications. However, the kilo-ohm change in magnetoresistance in this device also suggests that the material no longer consists of a simple nickel layer with holes but could have formed a complex alloy. The second technique involves the electron beam evaporation of nickel on an alumina template. Nickel antidot systems with three different hole dimensions were implemented using this technique. FESEM images show a periodic arrangement of pores on the nickel surface.

Keywords

Antidot; Applications; Based; Device; Fabrication Lithographic; Nickel; Potential; System

Controlled Subject

Electrical engineering

File Format

pdf

File Size

3164.16 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

Permissions

If you are the rightful copyright holder of this dissertation or thesis and wish to have the full text removed from Digital Scholarship@UNLV, please submit a request to digitalscholarship@unlv.edu and include clear identification of the work, preferably with URL.

Rights

IN COPYRIGHT. For more information about this rights statement, please visit http://rightsstatements.org/vocab/InC/1.0/


COinS