Award Date

1-1-1997

Degree Type

Thesis

Degree Name

Master of Electrical Engineering (MEE)

Department

Electrical Engineering

First Committee Member

A. Rahim Khoie

Number of Pages

114

Abstract

In this work, a comprehensive numerical model is presented for a multi-quantum well pin photovoltaic device. The model accounts for the fundamental carrier dynamics in the quantum wells without assuming thermal equilibrium between the confined carriers and crystal lattice. It is based on a self-consistent solution of the Poisson, Schrodinger, and current continuity equations. In the quantum well regions, a second set of continuity equations is coupled to these three equations to account for the recombination, generation, escape, and capture in the quantum well. The effect of these quantum well rates on device performance is examined for various well configurations and material parameters. The simulation predicts that efficiency improvements above a baseline Al{dollar}\sb{\rm x}{dollar}Ga{dollar}\sb{\rm 1-x}{dollar}As control cell are possible for low mole fractions of aluminum. Furthermore, with proper design, a multiple quantum well device can exceed the efficiency of a similar quality, bulk GaAs pin device.

Keywords

Consistent; Devices; Model; Multiple; Numerical; Photovoltaic; Quantum; Self; Well

Controlled Subject

Electrical engineering; Force and energy

File Format

pdf

File Size

2969.6 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

Permissions

If you are the rightful copyright holder of this dissertation or thesis and wish to have the full text removed from Digital Scholarship@UNLV, please submit a request to digitalscholarship@unlv.edu and include clear identification of the work, preferably with URL.

Identifier

https://doi.org/10.25669/wmtr-0gfd


Share

COinS