Award Date

1-1-1995

Degree Type

Thesis

Degree Name

Master of Science (MS)

Department

Electrical and Computer Engineering

First Committee Member

R. Venkatasubramanian

Number of Pages

52

Abstract

The surface kinetics processes in the molecular beam epitaxy (MBE) growth of GaAs (100) and the MBE doping kinetics are studied theoretically, using a stochastic model which is based on the master equation approach and random distribution approximation. The kinetic processes included in the model are: adsorption, surface migration and evaporation. In the study of surface roughening kinetics in GaAs (100), a transition temperature at which time averaged RHEED intensity is maximum was observed. The RHEED intensity increases with temperature till the transition temperature and decreases beyond the transition temperature. The doping studies were performed for various growth conditions. The sticking coefficient decreases with T due to surface segregation aided evaporation of In at higher temperature. The surface segregation of In occurs due to a strong repulsive interaction between In and the host lattice. The time and growth rate dependences of the phenomenon are also studied.

Keywords

Arsenide; Compounds; Gallium; Gallium Arsenide; Growth; Kinetic; Mbe; Processes; Semiconductors; Study; Surface; Theoretical

Controlled Subject

Electrical engineering; Materials science

File Format

pdf

File Size

1873.92 KB

Degree Grantor

University of Nevada, Las Vegas

Language

English

Permissions

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Identifier

https://doi.org/10.25669/4v8m-005q


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