Award Date
5-1-2020
Degree Type
Thesis
Degree Name
Master of Science in Electrical Engineering (MSEE)
Department
Electrical and Computer Engineering
First Committee Member
R. J. Baker
Second Committee Member
Pushkin Kachroo
Third Committee Member
Biswajit Das
Fourth Committee Member
Thomas Hartmann
Number of Pages
68
Abstract
Radiation hard electronics are indispensable in providing reliable diagnostics in fast radiation detection, which are necessary for new fundamental science research. In the case of radiation detection, transimpedance amplifiers are needed to magnify low photodetector signals to readable levels reliably. This thesis investigates a way to design a transimpedance CMOS-front-end transimpedance amplifier (TIA) as a first stage front-end amplifier. The TIA is to be mounted on silicon photomultiplier (SiPM), as a photodetector in fast neutron scintillation experiments capable of sustaining up to 10^15 n/cm of fast neutrons in the range of 0.1 to 20 MeV. The proposed TIA was designed using "ON's C5 process" (a 600 nm CMOS process). It has a 300 kΩ gain, a bandwidth minimum of 250 MHz, noise below 5 pA/√Hz, an output swing of 1.5–2 V, and a power consumption less than 25 mW. The TIA is expected to sustain reliable performance (
Keywords
Amplifiers; Analog Circuits; Electroinics; Neutron Effects; Radiation Effects
Disciplines
Electrical and Computer Engineering
File Format
File Size
1.6 MB
Degree Grantor
University of Nevada, Las Vegas
Language
English
Repository Citation
Valles Montenegro, Mario, "Front-End CMOS Transimpedance Amplifiers on a Silicon Photomultiplier Resistant to Fast Neutron Fluence" (2020). UNLV Theses, Dissertations, Professional Papers, and Capstones. 3968.
http://dx.doi.org/10.34917/19412193
Rights
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