Location
University of Nevada Las Vegas, Student Union Ball Room
Start Date
6-8-2009 9:30 AM
End Date
6-8-2009 12:00 PM
Description
Gallium nitride (GaN) is a group-III nitride semiconductor; which may prove useful in developing optical instruments that operate under high ambient pressures. The purpose of this project is to examine the properties of GaN under varying conditions. The methods used in this experiment consist of modeling free energy as a function of lattice constants; calculating bond lengths, bond strengths, and bulk moduli; and comparing the resultant data with values in published literature. We will also compare these results with experimental data drawn from x-ray diffraction scans. By doing so, we hope to determine whether gallium nitride is suitable for use as a semiconductor at high pressures.
Keywords
Gallium nitride (GaN); High pressure environments; Optical instruments; Semiconductors
Disciplines
Physics | Semiconductor and Optical Materials
Language
English
The Effects of pressure on wide bandgap GaN semiconductors
University of Nevada Las Vegas, Student Union Ball Room
Gallium nitride (GaN) is a group-III nitride semiconductor; which may prove useful in developing optical instruments that operate under high ambient pressures. The purpose of this project is to examine the properties of GaN under varying conditions. The methods used in this experiment consist of modeling free energy as a function of lattice constants; calculating bond lengths, bond strengths, and bulk moduli; and comparing the resultant data with values in published literature. We will also compare these results with experimental data drawn from x-ray diffraction scans. By doing so, we hope to determine whether gallium nitride is suitable for use as a semiconductor at high pressures.
Comments
Abstract & poster