Document Type
Article
Publication Date
8-1997
Publication Title
Journal of Vacuum Science & Technology B
Volume
15
Issue
4
First page number:
1159
Last page number:
1162
Abstract
A Monte Carlo simulation study is performed to investigate the Ga desorption behavior during AlGaAs-on-GaAs heterointerface formation by molecular beam epitaxy. The transients in the Ga desorption rate upon opening the Al shutter are shown to be associated with the concurrent reduction in the V/III flux ratio. Monte Carlo simulations employing a constant V/III flux ratio yield a “steplike” variation in the Ga desorption rate with the resulting interfaces closer in abruptness to the ideal AlGaAs-on-GaAs interface. Further details on the stoichiometry of the interface and its relationship with predicted Ga desorption profiles is presented.
Keywords
Electron-stimulated desorption; Gallium arsenide semiconductors; Molecular beam epitaxy; Semiconductors
Disciplines
Computer Engineering | Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials
Language
English
Permissions
© 1997 American Vacuum Society
Repository Citation
Mahalingam, K.,
Dorsey, D. L.,
Evans, K. R.,
Venkat, R.
(1997).
Gallium Desorption Behavior At AlGaAs/GaAs Heterointerfaces During High-temperature Molecular Beam Epitaxy.
Journal of Vacuum Science & Technology B, 15(4),
1159-1162.
https://digitalscholarship.unlv.edu/ece_fac_articles/458
Included in
Computer Engineering Commons, Electronic Devices and Semiconductor Manufacturing Commons, Semiconductor and Optical Materials Commons