A 2-dimensional Self-consistent numerical-model for High Electron-mobility Transistor

Document Type

Article

Publication Date

4-1991

Publication Title

IEEE Transactions on Electron Devices

Volume

38

Issue

4

First page number:

852

Last page number:

861

Abstract

A new two-dimensional self-consistent numerical model for a high-electron-mobility transistor (HEMT) is presented. In previous two-dimensional models, the quantization of electrons in the quantum well has been treated by using a triangular well approximation in which the width of the quantum well is assumed to be zero and the quantized electrons are assumed to reside right at the heterojunction. The authors do not make the above assumptions. Instead, the spatial spreading of the electron concentration in the quantum well normal to the heterojunction is taken into account by solving Schrodinger's and Poisson's equations self-consistently. The Boltzmann transport equation, in the form of a current continuity equation, and an energy balance equation are solved to obtain the transient and steady-state transport behaviour. The I d-Vd characteristics, transconductance, gate capacitance, and unity-gain frequency of a single quantum-well HEMT are discussed. Also discussed are the dependencies of the device performance on the gate length and the doping concentration of the AlGaAs layer.

Keywords

Gallium arsenide semiconductors; Modulation-doped field-effect transistors; Molecular beam epitaxy

Disciplines

Electrical and Computer Engineering | Electronic Devices and Semiconductor Manufacturing | Semiconductor and Optical Materials

Language

English

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