Modeling of the charging dynamics in silicon nanocrystal nonvolatile flash memory cells

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Charging dynamics of silicon nanocrystal nonvolatile flash memory cells is explained using a simplified engineering model based on effective mass approximation. The model is comprehensive with all necessary physics and includes the presence of discrete energy levels in these nanocrystals and also the effect of shift in energy levels in the nanocrystals with more than one electron. The simulated results of current versus time and current versus gate voltage match very well with the experimental results. The results explain the anomalous peaks observed in the I–V characteristics. These peaks can be attributed to the charging of the smaller diameter nanocrystals with more than one electron at higher gate voltages.


Charge dynamics; Coulomb blockade effects; Flash memory; Nanocrystals; Nanosilicon; Tunneling


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